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2SC4300
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4300 900 800 7 5(Pulse10) 2.5 75(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
Application : Switching Regulator and General Purpose
(Ta=25C) 2SC4300 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 75typ V V
16.2
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=2A IC=2A, IB=0.4A IC=2A, IB=0.4A VCE=12V, IE=-0.5A VCB=10V, f=1MHz
External Dimensions FM100(TO3PF)
0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 o3.30.2 1.6
Unit
A
23.00.3
V
9.50.2
A
a b
MHz pF
1.75 2.15 1.05 +0.2 -0.1 5.450.1 5.450.1 4.4 1.5 0.65 +0.2 -0.1
3.3
0.8
sTypical Switching Characteristics (Common Emitter)
VCC (V) 250 RL () 125 IC (A) 2 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.3 IB2 (A) -1 ton (s) 1max tstg (s) 5max tf (s) 1max
3.35
1.5
B
C
E
Weight : Approx 6.5g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
5
VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at)( V ) Base-Emitter Saturation Voltage V B E (s at)( V) (IC/I B= 5)
I C - V BE Temperature Characteristics (Typical)
5 (VCE=4V)
700mA
60 0m A
500m A
2
Collector Current I C (A)
300mA
3
200mA
Collector Current I C (A)
4
400 mA
4
3
mp)
Temp
)
e Te
(Cas
2
IB=100mA
1
2
Te m p) 25 C - 5 5 C
1
1
V C E( sat) 0 0.03 0.05 0.1 0.5
125C (C
as
e
0
0
1
2
3
4
1
5
10
0
0
0.2
0.4
0.6
0.8
-55C (C
-55C (Case Temp) 25C (Case Temp) e Temp) 125C (Cas
125C
25C
(Case
V B E( sat)
ase Tem
p)
1.0
Collector-Emitter Voltage V C E( V)
Collector Current I C( A)
Base-Emittor Voltage V B E( V)
(VCE=4V) 50 10
j- a( C/W)
hFE - IC Characteristics (Typical)
t on*t s t g *t f ( s)
t on *t stg * tf - I C Characteristics (Typical)
j-a - t Characteristics
2
DC Cur rent Gain h F E
25C
VCC 250V IC:IB1:-IB2 =2:0.3:1 Const.
Transient Thermal Resistance
125C
5
t s tg
1
-55C
Swi tchi ng T im e
0.5
1 0.5 ton 0.2 0.1 0.5
tf
10
5 0.02
0.05
0.1
0.5
1
5
1
5
0.1
1
10 Time t(ms)
100
3.0
1.2
1000
Collector Current I C( A)
Collector Current I C( A)
Safe Operating Area (Single Pulse)
20 10 5 Collector Curre nt I C( A)
10
10 s
Reverse Bias Safe Operating Area
20 10 80
P c - T a Derating
1m
0
s
s
5 Collector Curr ent I C (A)
M aximum Power Dissipa ti on P C( W)
60
W ith In
1 0.5
fin
1 0.5
ite he
40
at si nk
0.1 0.05
Without Heatsink Natural Cooling
0.1 0.05
Without Heatsink Natural Cooling L=3mH IB2=-1.0A Duty:less than 1%
20
0.01
10
50
100
500
1000
0.01 50
100
500
1000
3.5 0
Without Heatsink 0 50 100 150
Collector-Emitter Voltage V C E( V)
Collector-Emitter Voltage V C E( V)
Ambient Temperature Ta(C)
98

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